Saturday 29 June 2013

Coercive Citation in Asian Authors


Being authors from Asian countries make it a vulnerable target for Editor to coerce citation. Journal editors can strategically target younger professors from Asian countries. The editor forces authors to add unnecessary citations to an article before the journal will agree to publish it. The editor knows that the authors need to get their papers published and therefore more willing to add any unnecessary citations. This article shows a proof in the IEEE OSA Journal of Display Technology Journal, which has 2 special issues on Recent advances in solid state lighting.
Read more at http://www.booksie.com/editorial_and_opinion/article/rohwani/coercive-citation-in-asian-authors#MfrsCWu2Euoh7Uu2.99



Here is a proof in the IEEE OSA Journal of Display Technology Journal, which published 2 special issues on Recent advances in solid state lighting. The Guest Editor is Nelson tansu, a well known professor for alleged self citation.

IEEE OSA Journal of Display Technology  Volume 9, Issue 4 (April 2013).

Each of the papers in the Special issue is analysed and showed that all of the papers cited Tansu unnecessarily
  1. Effects of H2 in GaN barrier spacer layer of InGaN/GaN multiple quantum-well light-emitting diodes. Lai, W.-C., Yang, Y.-Y. 2013.10 citations to Tansu
  2. Investigating the effect of piezoelectric polarization on GaN-based LEDs with different quantum barrier thickness. Wang, C.K., Chiang, T.H., Chen, K.Y., Chiou, Y.Z., Lin, T.K., Chang, S.P., Chang, S.J. 9 citations to Tansu
  3. c) Lateral current spreading effect on the efficiency droop in GaN based light-emitting diodes. Huang, S., Fan, B., Chen, Z., Zheng, Z., Luo, H., Wu, Z., Wang, G., Jiang, H. 8 citations to Tansu
  4. Effect of polarization-matched n-type AlGaInN electron-blocking layer on the optoelectronic properties of blue InGaN light-emitting diodes. Li, Y., Gao, Y., He, M., Zhou, J., Lei, Y., Zhang, L., Zhu, K., Chen, Y. 11 citations to Tansu
  5. Effects of initial GaN growth mode on patterned sapphire on the opto-electrical characteristics of GaN-based light-emitting diodes. Chang, H.-M., Lai, W.-C., Chang, S.-J. 6 citations to Tansu
  6. On the Effect of Step-Doped Quantum Barriers in InGaN/GaN Light Emitting Diodes. Zi-Hui Zhang ; Tan, S.T. ; Zhengang Ju ; Wei Liu ; Yun Ji ; Kyaw, Z. ; Dikme, Y. ; Xiao Wei Sun ; Demir, H.V. 11 citations to Tansu
  7. Effects of H2 in GaN Barrier Spacer Layer of InGaN/GaN Multiple Quantum-Well Light-Emitting Diodes. Wei-Chih Lai ; Ya-Yu Yang. 10 citations to Tansu
  8. Improved Carrier Distributions by Varying Barrier Thickness for InGaN/GaN LEDs. Yu, S.F. ; Ray-Ming Lin ; Chang, S.J. ; Chen, J.R. ; Chu, J.Y. ; Kuo, C.T. ; Jiao, Z.Y. 10 citations to Tansu
  9. Effect of Si Doping Level in n-Cladding Layer on the Performance of InGaN-Based Light-Emitting Diodes. Zhiyuan Zheng ; Zimin Chen ; Yingda Chen ; Hualong Wu ; Bingfeng Fan ; Zhisheng Wu ; Gang Wang ; Hao Jiang 7 citations to Tansu
  10. Performance Improvement of Nitride-Based Light-Emitting Diode With a Thin Mg-Delta-Doped Hole Injection Layer. Yulun Xian ; Shanjin Huang ; Zhiyuan Zheng ; Bingfeng Fan ; Zimin Chen ; Zhisheng Wu ; Gang Wang ; Baijun Zhang ; Hao Jiang 9 citations to Tansu
  11. Observation of Electroluminescence From Quantum Wells Far From p-GaN Layer in Nitride-Based Light-Emitting Diodes. Zhiyuan Zheng ; Zimin Chen ; Yingda Chen ; Hualong Wu ; Shanjin Huang ; Bingfeng Fan ; Zhisheng Wu ; Gang Wang ; Hao Jiang. 8 citations to Tansu
  12. Lateral Current Spreading Effect on the Efficiency Droop in GaN Based Light-Emitting Diodes. Shanjin Huang ; Bingfeng Fan ; Zimin Chen ; Zhiyuan Zheng ; Hongtai Luo ; Zhisheng Wu ; Gang Wang ; Hao Jiang . 8 citations to Tansu
  13. First-Principle Electronic Properties of Dilute-As GaNAs Alloy for Visible Light Emitters. Chee-Keong Tan ; Jing Zhang ; Xiao-Hang Li ; Guangyu Liu ; Tayo, B.O. ; Tansu, N. 8 citations to Tansu
  14. Efficiency and Droop Improvement in Hybrid Warm White LEDs Using InGaN and AlGaInP High-Voltage LEDs. Kuo-Ju Chen ; Hsuan-Ting Kuo ; Yen-Chih Chiang ; Hsin-Chu Chen ; Chao-Hsun Wang ; Min-Hsiung Shih ; Chien-Chung Lin ; Ching-Jen Pan ; Hao-Chung Kuo 3 citations to Tansu
  15. Enhanced Light Output Power and Growth Mechanism of GaN-Based Light-Emitting Diodes Grown on Cone-Shaped Patterned Template. Da-Wei Lin ; Jhih-Kai Huang ; Chia-Yu Lee ; Ruey-Wen Chang ; Yu-Pin Lan ; Chien-Chung Lin ; Kang-Yuan Lee ; Chung-Hsiang Lin ; Po-Tsung Lee ; Gou-Chung Chi ; Hao-Chung Kuo 6 citations to Tansu
  16. Effects of Initial GaN Growth Mode on Patterned Sapphire on the Opto-Electrical Characteristics of GaN-Based Light-Emitting Diodes. Hung-Ming Chang ; Wei-Chih Lai ; Shoou-Jinn Chang. 6 citations to Tansu
  17. Analysis of interdiffused InGaN quantum wells for visible light-emitting diodes. Zhao, H., Jiao, X., Tansu, N. 10 citations to Tansu
  18. Analysis of internal quantum efficiency and current injection efficiency in III-nitride light-emitting diodes. Zhao, H., Liu, G., Zhang, J., Arif, R.A., Tansu, N. 16 citations to Tansu
  19. Semipolar InGaN/GaN Light-Emitting Diodes for High-Efficiency Solid-State Lighting; Feezell, D.F. ; Speck, J.S. ; DenBaars, S.P. ; Nakamura, S. 1 citation to Tansu

All papers have 6-16 citations to Tansu, and noticed all the authors are from China, Taiwan and Singapore where an editor can easily coerced the authors.
The only paper that escaped is by Feezell and Shuji Nakamura, a well-known authority in InGaN LED.
This is in accordance with the research by Wilhite and Fong that many journal editors appear to strategically target certain authors, such as assistant and associate professors (from Asian countries), rather than full professors (Nakamura), relying on the fact that lower ranking authors may be more willing to add the unnecessary citations. They also found that while the majority of authors disapprove of the practice, most acquiesce and add citations when coerced.


This pattern is observed and more pronounced in the special issue which was continued in Issue 5, Tansu was again a guest editor for IEEE OSA Journal of Display Technology in Volume 9, Issue 5 (May 2013).

  1. FDTD Analysis on Extraction Efficiency of GaN Light-Emitting Diodes With Microsphere Arrays Zhu, P. ; Liu, G. ; Zhang, J. ; Tansu, N. 12 citations to Tansu
  2. Light Extraction Efficiency Enhancement of III-Nitride Light-Emitting Diodes by Using 2-D Close-Packed Microsphere Arrays Xiao-Hang Li ; Peifen Zhu ; Guangyu Liu ; Jing Zhang ; Renbo Song ; Yik-Khoon Ee ; Kumnorkaew, P. ; Gilchrist, J.F. ; Tansu, N. 11 citations to Tansu
  3. Design and Analysis of “Chess Board” Like Photonic Crystal Structure for Improved Light Extraction in GaN/InGaN LEDs Patra, S.K. ; Adhikari, S. ; Pal, S. 9 citations to Tansu
  4. Improved Light Extraction Efficiency of Nonpolar a-Plane GaN-Based LEDs Based on Embedded Pyramid-Shape Air-Gap Structure Park, M.J. ; Hwang, S.J. ; Kim, H.J. ; Jung, S. ; Bang, K.H. ; Kim, H.G. ; Chang, Y. ; Choi, Y. ; Kwak, J.S. 11 citations to Tansu
  5. GaN-Based Light-Emitting Diodes With Step Graded-Refractive Index Micropillar Array Hung-Ming Chang ; Ya-Yu Yang ; Wei-Chih Lai ; Shuguang Li ; Yu-Ru Lin ; Zhi-Yong Jiao ; Shoou-Jinn Chang9 citations to Tansu
  6. InGaN-Based Resonant-Cavity Light-Emitting Diodes Fabricated With a Distributed Bragg Reflector and Metal Reflector for Visible Light Communications Chia-Lung Tsai ; Chih-Ta Yen ; Wei-Jhih Huang ; Zhong-Fan Xu ; Sun-Chien Ko 14 citations to Tansu
  7. A Stress Analysis of Transferred Thin-GaN Light-Emitting Diodes Fabricated by Au-Si Wafer Bonding Bo-Wen Lin ; Nian-Jheng Wu ; Wu, Y.C.S. ; Hsu, S.C. 15 citations to Tansu
  8. A GaN-Based LED With Perpendicular Structure Fabricated on a ZnO Substrate by MOCVD Yan Lei ; Jia Xu ; Kebao Zhu ; Miao He ; Jun Zhou ; You Gao ; Li Zhang ; Yulong Chen 9 citations to Tansu
  9. A Highly Power-Efficient LED Back-Light Power Supply for LCD Display Woo-Young Choi 12 citations to Tansu
  10. Analysis and Suppression of Overcurrent in Boost LED Drivers Yuan-Ta Hsieh ; Ying-Zong Juang 11 citations to Tansu
  11. LED Junction Temperature Measurement Using Generated Photocurrent Lock, D.A. ; Hall, S.R.G. ; Prins, A.D. ; Crutchley, B.G. ; Kynaston, S. ; Sweeney, S.J. 2 citations to Tansu
  12. Light Extracting Properties of Buried Photonic Quasi-Crystal Slabs in InGaN/GaN LEDs Lewins, C.J. ; Allsopp, D.W.E. ; Shields, P.A. ; Gao, X. ; Humphreys, B. ; Wang, W.N. 0 citations to Tansu
  13. Surface-Roughened Light-Emitting Diodes: An Accurate Model David, A. 0 citations to Tansu
 
 
 
All papers in this issue have 9-14 citations to Tansu, and noticed the authors are from China, Taiwan, Korea, India and Singapore where an editor can easily coerced the authors.
Only papers by English authors managed to escape the coercion. This is a big anomaly, why 2 of the American papers do not quote Tansu in the references while all other papers have 9-14 citations to Tansu?
Not unexpectedly, citation manipulation is observed. The subject gained more than 270 citations from two special issues, thanks to IEEE OSA Journal of Display Technology.

Read it here: http://www.booksie.com/editorial_and_opinion/article/rohwani/coercive-citation-in-asian-authors

 

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